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HMT41GS6BFR8A-PB Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
2xM368L3223DTL-CB0 Capacity 512MB (2x 256MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2
OWC8566DDR3S8GB Capacity 8GB (1x 8GB) Brand OWC Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
M470T6554CZ3-CCC Capacity 512MB (1x 512MB) Brand Samsung Speed DDR2-400 - 400MT/s - PC2-3200 Voltage 1
this means you can upgrade to Fujitsu brand memory without voiding your system’s original warranty
Micron 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr4-2133-udimm-8gb-1x-dr HMT41GS6BFR8A-PB Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2666 MT s 288 pin RDIMM RAM module from Micron . This RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed
